Parts By NSN 5962-01-249-1889
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: 16236, 34335, 34649, 94580, 04713 |
NIIN: 012491889 |
NCB Code: USA (01) |
Manufacturers: dla land and maritime , advanced micro devices inc , intel corporation , honeywell international inc , freescale semiconductor inc |
NSN 5962-01-249-1889 assigned to Microcircuit Memory manufactured by Dla Land And Maritime, Advanced Micro Devices Inc, Intel Corporation, Honeywell International Inc, Freescale Semiconductor Inc. Listed below are the available items with the NSN 5962-01-249-1889, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
ROM PROM FAMILY 020 | dla land and maritime | microcircuit memory | Avl | RFQ |
AM2716DMB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
MD2716 B | intel corporation | microcircuit memory | Avl | RFQ |
10069392-101 | honeywell international inc | microcircuit memory | Avl | RFQ |
MCM2716BJXC | freescale semiconductor inc | microcircuit memory | Avl | RFQ |
10104656 T104 | honeywell international inc | microcircuit memory | Avl | RFQ |
10104656 104 | honeywell international inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 55.0/+100.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND ERASABLE |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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