Parts By NSN 5962-01-077-6118
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: 17856, 13499, 27014, 22818, 94117, 15942, 16236 |
NIIN: 010776118 |
NCB Code: USA (01) |
Manufacturers: siliconix incorporated , rockwell collins inc , national semiconductor corp , hubbell harvey inc , bae systems information and electronic systems integration inc , usacecom intelligence electronic , dla land and maritime |
NSN 5962-01-077-6118 assigned to Microcircuit Memory manufactured by Siliconix Incorporated, Rockwell Collins Inc, National Semiconductor Corp, Hubbell Harvey Inc, Bae Systems Information And Electronic Systems Integration Inc. Listed below are the available items with the NSN 5962-01-077-6118, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
DG501AP 883B 2 | siliconix incorporated | microcircuit memory | Avl | RFQ |
DG501AP 883B | siliconix incorporated | microcircuit memory | Avl | RFQ |
DG501BP | siliconix incorporated | microcircuit memory | Avl | RFQ |
351 7449 021 | rockwell collins inc | microcircuit memory | Avl | RFQ |
AM3705DM | national semiconductor corp | microcircuit memory | Avl | RFQ |
AM3705D883B | national semiconductor corp | microcircuit memory | Avl | RFQ |
730-0045 | hubbell harvey inc | microcircuit memory | Avl | RFQ |
310429P2 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
DG501AP-4 | siliconix incorporated | microcircuit memory | Avl | RFQ |
DG501AP-2 | siliconix incorporated | microcircuit memory | Avl | RFQ |
DG501AP 883C | siliconix incorporated | microcircuit memory | Avl | RFQ |
0213-1-1150-2 | usacecom intelligence electronic | microcircuit memory | Avl | RFQ |
DMS 91137B | dla land and maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CZER | MEMORY DEVICE TYPE | ROM |
CZEQ | TIME RATING PER CHACTERISTIC | 1500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 2500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
AEHX | MAXIMUM POWER DISSIPATION RATING | 450.0 MILLIWATTS |
TEST | TEST DATA DOCUMENT | 15942-0213-1-1150-2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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