Parts By NSN 5962-01-077-0391
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: 18324, 50364, 34371, 16236, 34335, 82577, 01295, 1MY79 |
NIIN: 010770391 |
NCB Code: USA (01) |
Manufacturers: philips semiconductors ltd , mmi inc , intersil corporation , dla land and maritime , advanced micro devices inc , raytheon company , texas instruments incorporated , intersil communications inc |
NSN 5962-01-077-0391 assigned to Microcircuit Memory manufactured by Philips Semiconductors Ltd, Mmi Inc, Intersil Corporation, Dla Land And Maritime, Advanced Micro Devices Inc. Listed below are the available items with the NSN 5962-01-077-0391, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
CC5190-19 | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
17910 | mmi inc | microcircuit memory | Avl | RFQ |
B2051 19 | intersil corporation | microcircuit memory | Avl | RFQ |
HM9-7603-2 | intersil corporation | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 019 | dla land and maritime | microcircuit memory | Avl | RFQ |
DH75628 19 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
S82S123W | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
932821-19 | raytheon company | microcircuit memory | Avl | RFQ |
MMI5331 1F | mmi inc | microcircuit memory | Avl | RFQ |
SN54S288W-00 | texas instruments incorporated | microcircuit memory | Avl | RFQ |
B2051-19 | intersil communications inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG FAHRENHEIT |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
ADAT | BODY WIDTH | 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 82577-932623 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
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