Parts By NSN 5962-01-076-6610
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: 82577, 18324, 50364, 34371, 1MY79, 16236, 01295 |
NIIN: 010766610 |
NCB Code: USA (01) |
Manufacturers: raytheon company , philips semiconductors ltd , mmi inc , intersil corporation , intersil communications inc , dla land and maritime , texas instruments incorporated |
NSN 5962-01-076-6610 assigned to Microcircuit Memory manufactured by Raytheon Company, Philips Semiconductors Ltd, Mmi Inc, Intersil Corporation, Intersil Communications Inc. Listed below are the available items with the NSN 5962-01-076-6610, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
932820-95 | raytheon company | microcircuit memory | Avl | RFQ |
S82S129W | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
MM5301-1F | mmi inc | microcircuit memory | Avl | RFQ |
17730 | mmi inc | microcircuit memory | Avl | RFQ |
HM9-7611-2 | intersil corporation | microcircuit memory | Avl | RFQ |
B2054-95 | intersil corporation | microcircuit memory | Avl | RFQ |
B2054-95 | intersil communications inc | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 015 | dla land and maritime | microcircuit memory | Avl | RFQ |
SN92876W | texas instruments incorporated | microcircuit memory | Avl | RFQ |
CC5193-95 | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
SN54S287W | texas instruments incorporated | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DI |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
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