Parts By NSN 5962-01-408-2869
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: 0DUN9, 33297, 62786 |
NIIN: 014082869 |
NCB Code: USA (01) |
Manufacturers: samsung semiconductor inc , nec electronics usa inc , hitachi ltd |
NSN 5962-01-408-2869 assigned to Microcircuit Memory manufactured by Samsung Semiconductor Inc, Nec Electronics Usa Inc, Hitachi Ltd. Listed below are the available items with the NSN 5962-01-408-2869, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
K6T1008C2EDB7000 | samsung semiconductor inc | microcircuit memory | Avl | RFQ |
PD431000ACZ-70L | nec electronics usa inc | microcircuit memory | Avl | RFQ |
HM628128LP-7 | hitachi ltd | microcircuit memory | Avl | RFQ |
UPD431000ACZ-70L | nec electronics usa inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CZER | MEMORY DEVICE TYPE | RAM |
FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10) |
SR-5 | THE MANUFACTURERS DATA | |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 131072 |
SR-5 | DESIGN CONTROL REFERENCE | HM628128LP-7 |
CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
SR-5 | MANUFACTURERS CODE | 62786 |
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