Parts By NSN 5962-01-270-3486
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: K0656, 13499, 05464, 62786, 61722, 61772 |
NIIN: 012703486 |
NCB Code: USA (01) |
Manufacturers: bae systems operations limited dba bae systems plc , rockwell collins inc , industrial electronic engineers , hitachi ltd , epson electronics america inc , integrated device technology inc |
NSN 5962-01-270-3486 assigned to Microcircuit Memory manufactured by Bae Systems Operations Limited Dba Bae Systems Plc, Rockwell Collins Inc, Industrial Electronic Engineers, Hitachi Ltd, Epson Electronics America Inc. Listed below are the available items with the NSN 5962-01-270-3486, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
9481-00085 | bae systems operations limited dba bae systems plc | microcircuit memory | Avl | RFQ |
351 5642 042 | rockwell collins inc | microcircuit memory | Avl | RFQ |
47185-01 | industrial electronic engineers | microcircuit memory | Avl | RFQ |
HM6116-3 | hitachi ltd | microcircuit memory | Avl | RFQ |
IDT6116SA150DB | epson electronics america inc | microcircuit memory | Avl | RFQ |
IDT6116SA150DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
6116S150DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING550 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDSTATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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