Parts By NSN 5962-01-267-3847
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
CAGE Code: 82340, 34649, 3R731, 16236, 34335, 50088, 34659 |
NIIN: 012673847 |
NCB Code: USA (01) |
Manufacturers: edo corporation , intel corporation , fujitsu america inc , dla land and maritime , advanced micro devices inc , stmicroelectronics ltd , r r templeton corporation |
NSN 5962-01-267-3847 assigned to Microcircuit Memory manufactured by Edo Corporation, Intel Corporation, Fujitsu America Inc, Dla Land And Maritime, Advanced Micro Devices Inc. Listed below are the available items with the NSN 5962-01-267-3847, along with the related parts. Please submit an instant RFQ form to receive a competitive quote within 15 minutes.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
115268-1 | edo corporation | microcircuit memory | Avl | RFQ |
D2164A-20 | intel corporation | microcircuit memory | Avl | RFQ |
MD2164A 15 B | intel corporation | microcircuit memory | Avl | RFQ |
MB8264-15C | fujitsu america inc | microcircuit memory | Avl | RFQ |
DMS 91090B | dla land and maritime | microcircuit memory | Avl | RFQ |
AM9064-15L BEA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
MKB4564P-82 | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
MD2164A-15 B | r r templeton corporation | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND DYNAMIC |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510244 GOVERNMENT SPECIFICATION |
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